International group of researchers, supervised by the Russian scientist, created a single-electron transistor, based upon graphene.
      
      Graphene is considered to be the foundation of future nanoelectronics, since silicon transistors cannot be any smaller due to some quantum effects, changing silicon electronic properties. These effects cause “leakage” of electric charge, when a transistor is smaller than 10 nanometers.
      
      Researchers succeeded in creating a graphene transistor, able to work at room temperature. Russian scientist, coming from Chernogolovka’s science centre, says graphene has several advantages, compared to silicon, but first one is better electric conductivity. One more interesting fact about this transistor is that it shows Hall effect at room temperature.
      
      Source: Science News