The study by Russian specialists may help in creating new generation electronics with use of carbon instead of silicon.

      Scientists from the Skolkovo Science and Technology Institute and Thomas John Watson IBM Research Center have found out that silicon nanotubes are flattened under the influence of metal, and suggested ways to avoid it, the Skolkovo Institute press service said on Tuesday.

      The research work was published in the journal Physical Review Letters.

      The study showed that the resistance increases because the metal used in the transistor contacts, flattens the tubes due to the surface tension. According to researchers, nanotubes of smaller diameter should be used for the manufacture of transistors and they will be less flattened. Moreover, using metals with a lower surface tension will be helpful too.